2011-07-15

Wafer fab, Toshiba, SanDisk, NAND, flash, memory, semiconductor Toshiba, SanDisk open NAND flash wafer fab



LONDON – Toshiba Corp. and SanDisk Corp. have announced the opening of Fab 5, the third 300-mm wafer fab for the production of NAND flash memory at Toshiba's Yokkaichi Operations in Mie Prefecture, Japan.

The fab was described as having a total budget of 800 billion yen (about $10 billion) in 2010 and a fully facilitized capacity of about 200,000 wafer starts per month when the manufacturing expansion plan was re-activated in 2010.

Toshiba began the construction of Fab 5 in July 2010 and it started volume production on 24-nm process technology in July 2011. First wafer outs are expected in August. The chipmaking equipment has been paid for by Flash Forward Ltd., a joint venture between Toshiba and SanDisk formed in September 2010 – 50.1 percent owned by Toshiba and 49.9 percent by SanDisk.

The plant will transition to a 19-nm manufacturing process technology which is the world's smallest and most advanced process node.


Related links and articles:

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Toshiba fab portends more NAND capacity adds

Toshiba mulls $8.9 billion NAND flash fab









Wafer fab, Toshiba, SanDisk, NAND, flash, memory, semiconductor Toshiba, SanDisk open NAND flash wafer fab

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